SKU:64139153690
Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm , N type , P doped, 1SP R: 0.1-1.0ohm.cm - Fm100SOonSIPa100D0525C1R01US
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Ships within 48 hours · Estimated delivery Jul 25 - Jul 30
Description
Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm , N type , P doped, 1SP R: 0.1-1.0ohm.cm - Fm100SOonSIPa100D0525C1R01USThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 100 nm ( 1000A) + 10% for each side ( coatd on both sides ) Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type P dped Resistivity: 0. 1 1. 0 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" + 0. 5 mm x 0. 525 mm
7 V vs Li/Li+
The connection of tubing at a 90° angle to a threaded port
Rate Testing
2 ~ 8 x1017 /cm3
about 90 % usable area
There is no warranty for misuse and broken
Specific surface area
039 Ohms/cm (If you would like to measure the resistivity accurately
Secondary Flat: EJ(-211)
Two 1/4 BSPP Male-to-Male Couplers
resistance and high viscosity
Growth Technique: MOCVD
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