SKU:77625899750
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 4"dia x 0.525 mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm.cm - Fm300SOonSISbc101D0525C1R001
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Ships within 48 hours · Estimated delivery Jul 25 - Jul 30
Description
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 4"dia x 0.525 mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm.cm - Fm300SOonSISbc101D0525C1R001Thermal oxide Layer Research Grade, about 80% useful area SiO2 layer on 4"Silicon wafer Oxide layer thickness: 300 nm (3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type Sb dped Resistivity: 0. 01 0. 02 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" + 0. 5 mm x 0. 525 mmth Orientation: (111) + 0. 5o Polish: one side
For pressing sticky metal powders such as Al
1 g/ cm³ First discharge capacity 300
The wafer container is packed in 1000 class clean room and plastic bag
PROPERTY US VALUE METRIC VALUE Particle Size 0
(r33:460~1400pm/V)
Size: 10mm x 5mm x 0
Please keep the case in the vacuum or glove box if not used for a long time
150cmE2/Vs
Packing: In vacuum bag
conduct dry film and electrolyte
Conductive type: N-type/ Sb-dped
the system will automatically resume those stopped channels and ensure that the test is normally conducted
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