SKU:21062131162
Synthetic WS2, (3) mm x (3) mm x (0.1) mm
Free Shipping on orders over $50
Shipping Estimate
USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 25 - Jul 30
Description
Synthetic WS2, (3) mm x (3) mm x (0.1) mmSpecifications: Crystal: WS2 Type: Synthetic Size: ( ~ 3) mm x ( ~ 3) mm x ( ~ 0. 1) mm Related paper on two dimensional materials Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers Dicing Saw Film Coater
) Such feedthrough allows the adaptor to be placed outside the glove box
Orientation: (100) +/- 1
Features 100 mm standard width
SiC blade provides better cut-off rate and much lower cost for all sample cutting
Chamber Material & Size
Thermal conductivity: 10-20 w/m
Shiny Side Roughness (RZ): 1
Orientation: Y-cut with 36 degree off
1 ml/minute
Porosity: 42 ± 3 %
please click the link to order replacement glasses SSI-WD
• Size: 100
Easy Shipping
Quick Dispatch:
Your Synthetic WS2, (3) mm x (3) mm x (0.1) mm orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
Order Tracking:
You'll receive a tracking link by email once your Synthetic WS2, (3) mm x (3) mm x (0.1) mm ships.
Need Help?
Questions about Synthetic WS2, (3) mm x (3) mm x (0.1) mm, sizing, or delivery? We're just an email away.
Live Shipping Estimates:
Enter your location at checkout to see available shipping methods and costs for Synthetic WS2, (3) mm x (3) mm x (0.1) mm in your area.
Get Shipping Estimates
Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
- Please click here for more details>>> Return & Exchange Policy
You may also like
TGG Single Crystal Substrate: (111) 10 x 10 x. 0.5mm , 1 SP - TGGc1010S1
134.62
★★★★☆4.8 (10)
TiO2 (001) 10x10x0.5mm, 1sp - TOb101005S1
111.62
★★★★★4.9 (16)
Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm , N type , P doped, 1SP R: 0.1-1.0ohm.cm - Fm100SOonSIPa100D0525C1R01US
148.75
★★★★★5.0 (19)
Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cm
148.75
★★★★★4.7 (17)
TiO2 Anatase (110) 5x5x0.5mm, 1 SP
1068.14
★★★★★4.9 (16)
TiO2 (100) 5x5x0.5mm, 2sp - TOa050505S2
120.41
★★★★★5.0 (28)
TeO2 (110) 10x10x0.5mm, 2sp - TeOe101005S2
169.12
★★★★★4.8 (16)